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What is Electron Hole

extrinsic - doped semiconductor - p-type - acceptorIn the semiconductor, free charge carriers are electrons and electron holes (electron-hole pairs). Electrons and holes are created by excitation of electron from valence band to the conduction band. An electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice. It is one of the two types of charge carriers that are responsible for creating electric current in semiconducting materials. Since in a normal atom or crystal lattice the negative charge of the electrons is balanced by the positive charge of the atomic nuclei, the absence of an electron leaves a net positive charge at the hole’s location. Positively charged holes can move from atom to atom in semiconducting materials as electrons leave their positions. When an electron meets with a hole, they recombine and these free carriers effectively vanish. The recombination means an electron which has been excited from the valence band to the conduction band falls back to the empty state in the valence band, known as the holes.

The conductivity of a semiconductor can be modeled in terms of the band theory of solids. The band model of a semiconductor suggests that at ordinary temperatures there is a finite possibility that electrons can reach the conduction band and contribute to electrical conduction. In the semiconductor, free charge carriers (electron-hole pairs) are created by excitation of electron from valence band to the conduction band. This excitation left a hole in the valence band which behaves as positive charge and an electron-hole pair is created. Holes can sometimes be confusing as they are not physical particles in the way that electrons are, rather they are the absence of an electron in an atom. Holes can move from atom to atom in semiconducting materials as electrons leave their positions.



Radiation Protection:

  1. Knoll, Glenn F., Radiation Detection and Measurement 4th Edition, Wiley, 8/2010. ISBN-13: 978-0470131480.
  2. Stabin, Michael G., Radiation Protection and Dosimetry: An Introduction to Health Physics, Springer, 10/2010. ISBN-13: 978-1441923912.
  3. Martin, James E., Physics for Radiation Protection 3rd Edition, Wiley-VCH, 4/2013. ISBN-13: 978-3527411764.
  5. U.S. Department of Energy, Instrumantation and Control. DOE Fundamentals Handbook, Volume 2 of 2. June 1992.

Nuclear and Reactor Physics:

  1. J. R. Lamarsh, Introduction to Nuclear Reactor Theory, 2nd ed., Addison-Wesley, Reading, MA (1983).
  2. J. R. Lamarsh, A. J. Baratta, Introduction to Nuclear Engineering, 3d ed., Prentice-Hall, 2001, ISBN: 0-201-82498-1.
  3. W. M. Stacey, Nuclear Reactor Physics, John Wiley & Sons, 2001, ISBN: 0- 471-39127-1.
  4. Glasstone, Sesonske. Nuclear Reactor Engineering: Reactor Systems Engineering, Springer; 4th edition, 1994, ISBN: 978-0412985317
  5. W.S.C. Williams. Nuclear and Particle Physics. Clarendon Press; 1 edition, 1991, ISBN: 978-0198520467
  6. G.R.Keepin. Physics of Nuclear Kinetics. Addison-Wesley Pub. Co; 1st edition, 1965
  7. Robert Reed Burn, Introduction to Nuclear Reactor Operation, 1988.
  8. U.S. Department of Energy, Nuclear Physics and Reactor Theory. DOE Fundamentals Handbook, Volume 1 and 2. January 1993.
  9. Paul Reuss, Neutron Physics. EDP Sciences, 2008. ISBN: 978-2759800414.

See above:

Properties of Semiconductors